Antonio DI BARTOLOMEO | NANOSCALE TRANSISTORS
Antonio DI BARTOLOMEO NANOSCALE TRANSISTORS
cod. 8860200016
NANOSCALE TRANSISTORS
| 8860200016 | |
| DEPARTMENT OF PHYSICS "E. R. CAIANIELLO" | |
| Corso di Dottorato (D.M.226/2021) | |
| PHYSICS AND EMERGENT TECHNOLOGIES | |
| 2022/2023 |
| YEAR OF COURSE 1 | |
| YEAR OF DIDACTIC SYSTEM 2022 | |
| FULL ACADEMIC YEAR |
| SSD | CFU | HOURS | ACTIVITY | |
|---|---|---|---|---|
| FIS/01 | 2 | 10 | LESSONS |
| Objectives | |
|---|---|
| THE TEACHING PROVIDES A DEEP KNOWLEDGE OF THE PHYSICS OF MODERN FIELD-EFFECT TRANSISTORS WITH PARTICULAR ATTENTION TO THE PHENOMENA OCCURRING AT THE NANOSCALE; IT ALSO COVERS DEVICES BASED ON NANOMATERIALS. |
| Prerequisites | |
|---|---|
| CALCULUS, ELECTROMAGNETISM, QUANTUM MECHANICS AND SOLID-STATE PHYSICS. |
| Contents | |
|---|---|
| METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET). (2H) NANOSCALE TRANSISTOR WITH BALLISTIC TRANSPORT: FROM 1D TO 2D TO BULK MOSFET. (2H) SCALING AND THE APPEARANCE OF SHORT CHANNEL EFFECTS. (1H) ULTRATHIN-BODY AND NANOWIRE FIELD EFFECT TRANSISTOR. (2H) METAL-SOURCE-DRAIN FIELD-EFFECT TRANSISTOR. SCHOTTKY BARRIER MOSFET. (2H) DEVICES BASED ON 2D MATERIALS. (1H) |
| Teaching Methods | |
|---|---|
| TRADITIONAL LECTURES WITH THE PRESENTATION OF THE EXPERIMENTAL PHENOMENA AND THEIR THEORETICAL INTERPRETATION AND A DETAILED DERIVATION OF MATHEMATICAL EXPRESSIONS. |
| Verification of learning | |
|---|---|
| THE ASSESSMENT OF THE LEVEL OF LEARNING REQUIRES AN ORAL DISCUSSION OF ABOUT AN HOUR. THE ORAL DISCUSSION, IN WHICH THE STUDENT IS ASKED TO DISCUSS A RANDOMLY CHOSEN SUBSET OF TOPICS, IS AIMED TO CHECK THE LEVEL OF THEORETICAL UNDERSTANDING, THE ANALYTICAL ABILITY AND THE PRESENTATION SKILLS OF THE STUDENT. THE ASSESSMENT CONSIDERS HOW EFFECTIVE ARE THE METHODS, HOW COMPLETE AND SOUND ARE THE REPLIES AND HOW CLEAR IS THE PRESENTATION. THE MINIMUM SCORE IS SUFFICIENT AND IS ATTRIBUTED WHEN THE STUDENT HAS A LIMITED BUT ENOUGH KNOWLEDGE OF BASIC DEVICE PHYSICS OR SHOWS INCERTITUDE IN THE APPLICATION OF THE METHODS TO EVALUATE DEVICE PARAMETERS. THE MAXIMUM SCORE IS EXCELLENT AND IS ATTRIBUTED WHEN THE STUDENT SHOWS EXCELLENT AND COMPLETE KNOWLEDGE OF DEVICE PHYSICS, COMBINED WITH THE ABILITY TO ANALYTICALLY FORMULATE IT. THE FINAL ASSESSMENT COMBINES THE SCORES OF THE ORAL DISCUSSION, AND IN MINOR PART, THE ATTENDANCE OF THE COURSE. |
| Texts | |
|---|---|
| M. LUNDSTROM, FUNDAMENTALS OF NANOTRANSISTORS, WORLD SCIENTIFIC, 2017 J. KNOCH, NANOELECTRONICS, DE GRUYTER, 2021 |
| More Information | |
|---|---|
| THE INSTRUCTOR IS AVAILABLE FOR INFORMATION OR DISCUSSIONS ABOUT THE CONTENTS OF THE COURSE AT ANY TIME. E-MAIL: ADIBARTOLOMEO@UNISA.IT |
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