Gian Domenico LICCIARDO | Publications

62153Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

	2015
	Articolo in rivista
	Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range IEEE TRANSACTIONS ON POWER ELECTRONICS. Vol. 30. Pag.5800-5809 ISSN:0885-8993.
	Licciardo, GIAN DOMENICO; Bellone, Salvatore; DI BENEDETTO, Luigi
	Versione online
	Digital Object Identifier (DOI): 10.1109/TPEL.2014.2376778 Codice identificativo ISI: WOS:000355258100042 Codice identificativo SCOPUS: 2-s2.0-84930682254
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62011Stream Processor for Real-Time Inverse Tone Mapping of Full-HD Images

	2015
	Articolo in rivista
	Stream Processor for Real-Time Inverse Tone Mapping of Full-HD Images IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. Pag.2531-2539 ISSN:1063-8210.
	Licciardo, GIAN DOMENICO; D'Arienzo, Antonio; Rubino, Alfredo
	Versione online
	Digital Object Identifier (DOI): 10.1109/TVLSI.2014.2366831 Codice identificativo ISI: WOS:000364209000016 Codice identificativo SCOPUS: 2-s2.0-84911478194
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64530A model of the off-behaviour of 4H–SiC power JFETs

	2015
	Articolo in rivista
	A model of the off-behaviour of 4H–SiC power JFETs SOLID-STATE ELECTRONICS. Vol. 109. Pag.17-24 ISSN:0038-1101.
	Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
	Versione online
	Digital Object Identifier (DOI): 10.1016/j.sse.2015.03.004 Codice identificativo ISI: WOS:000355062600004 Codice identificativo SCOPUS: 2-s2.0-84925343204
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68619Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications

	2015
	Articolo in rivista
	Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. Vol. 3. Pag.418-422 ISSN:2168-6734.
	DI BENEDETTO, Luigi; Landi, Giovanni; Licciardo, GIAN DOMENICO; Neitzert, Heinrich Christoph; Bellone, Salvatore
	Versione online
	Digital Object Identifier (DOI): 10.1109/JEDS.2015.2451097 Codice identificativo ISI: WOS:000369885000005 Codice identificativo SCOPUS: 2-s2.0-84940102311
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64577Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes

	2015
	Contributo in Atti di convegno
	Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes. In: Silicon Carbide and Related Materials 2014 Trans Tech Publications, Switzerland Vol.821-823, Pag.628-631
	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014) Grenoble, Francia Settembre 21-25, 2014
	DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Bellone, Salvatore; Nipoti, Roberta
	Digital Object Identifier (DOI): 10.4028/www.scientific.net/MSF.821-823.628 Codice identificativo SCOPUS: 2-s2.0-84950317915
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68348Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps

	2015
	Contributo in Atti di convegno
	Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps. In: Official Proocedings MICROTHERM 2015 Lodz University of Technology, Department of Semiconductor and Optoelectronic Devices Pag.36-39 ISBN:9788393219735
	Microtherm 2015 Lodz, Polonia 23-25 Giuno 2015
	Licciardo, GIAN DOMENICO; DI BENEDETTO, Luigi; Bellone, Salvatore
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