Heinrich Christoph NEITZERT | Publications
Heinrich Christoph NEITZERT Publications
1989 | |
Articolo in rivista | |
Charge carrier kinetics during growth of a-Si:H layers JOURNAL OF NON-CRYSTALLINE SOLIDS. Vol. 114. Pag.166-168 ISSN:0022-3093. | |
Neitzert, Heinrich Christoph; A., Werner; M., Kunst | |
Codice identificativo ISI: WOS:A1989CK49700052 Codice identificativo SCOPUS: 2-s2.0-0024833251 | |
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1989 | |
Articolo in rivista | |
Ion-beam-induced plastic deformation: a universal behaviour of amorphous solids RADIATION EFFECTS AND DEFECTS IN SOLIDS. Vol. 108. Pag.131-135 ISSN:1029-4953. | |
S., Klaumünzer; Changlin, Li; S., Löffler; M., Rammensee; G., Schumacher; Neitzert, Heinrich Christoph | |
Digital Object Identifier (DOI): 10.1080/10420158908217877 Codice identificativo ISI: WOS:A1989AN69100014 Codice identificativo SCOPUS: 2-s2.0-84867502890 | |
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1989 | |
Articolo in rivista | |
Hydrogen profiles of interfaces in amorphous silicon devices JOURNAL OF NON-CRYSTALLINE SOLIDS. Vol. 115. Pag.75-77 ISSN:0022-3093. | |
Neitzert, Heinrich Christoph; M., Briere | |
Codice identificativo ISI: WOS:A1989CK50000021 Codice identificativo SCOPUS: 2-s2.0-0024815860 | |
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1989 | |
Contributo in volume (Capitolo o Saggio) | |
Nuclear reaction analysis of electronic materials, Part II: Instability analysis of a-Si:H solar cell material. In Proc. of the 19th European Solid State Device Research Conference (ESSDERC) Pag.623-626 ISBN:3540510001 | |
M. A., Briere; Neitzert, Heinrich Christoph | |
Codice identificativo SCOPUS: 2-s2.0-84907822270 | |
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