Luigi DI BENEDETTO | Pubblicazioni

40942An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions

	2012
	Articolo in rivista
	An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions IEEE TRANSACTIONS ON POWER ELECTRONICS. Vol. 27. Pag.1641-1652 ISSN:0885-8993.
	Bellone, Salvatore; Francesco Della, Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
	Codice identificativo ISI: WOS:000304264000002 Codice identificativo SCOPUS: 2-s2.0-84856831031
	Visualizza sul Database dei Prodotti (IRIS)

42944A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

	2012
	Articolo in rivista
	A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs IEEE TRANSACTIONS ON ELECTRON DEVICES. Vol. 59 n. 9. Pag.2546-2549 ISSN:0018-9383.
	Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
	Digital Object Identifier (DOI): 10.1109/TED.2012.2203601 Codice identificativo ISI: WOS:000307905200043 Codice identificativo SCOPUS: 2-s2.0-84865490249
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55332Al+ Implanted Anode for 4H-SiC p-i-n Diodes

	2012
	Contributo in Atti di convegno
	Al+ Implanted Anode for 4H-SiC p-i-n Diodes. In: 2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power TechnologiesElectroChemical Society, Trans. on Gallium Nitride and Silicon Carbide Power Technologies PENNINGTON, NJ 08534-2839 ELECTROCHEMICAL SOC INC Vol.50, Pag.391-397 ISBN:9781607683513
	2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power TechnologiesElectroChemical Society, Trans. on Gallium Nitride and Silicon Carbide Power Technologies Honolulu 7-12 Ottobre
	Roberta, Nipoti; DI BENEDETTO, Luigi; C., Albonetti; Bellone, Salvatore
	Digital Object Identifier (DOI): 10.1149/05003.0391ecst Codice identificativo ISI: 000337755900042 Codice identificativo SCOPUS: 2-s2.0-84880972646
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42864An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs

	2012
	Contributo in Atti di convegno
	An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs. In: Proceedings of GE2012 Pisa University Press Pag.39-40 ISBN:9788867410125
	Bellone, Salvatore; DI BENEDETTO, Luigi
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47639A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs

	2012
	Contributo in Atti di convegno
	A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs. In: 2012 International Semiconductor Conference, CAS 2012, 345 E 47TH ST, NEW YORK, NY 10017 IEEE Vol.2, Pag.355-358 ISBN:9781467307369
	2010 International Semiconductor Conference Sinaia, Romania 15-17 October
	DI BENEDETTO, Luigi; Bellone, Salvatore
	Codice identificativo ISI: 000314223700071 Codice identificativo SCOPUS: 2-s2.0-84872850364
	Visualizza sul Database dei Prodotti (IRIS)