Alfredo RUBINO | Publications
Alfredo RUBINO Publications
| 2016 | |
| Contributo in Atti di convegno | |
| Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET. In: ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems Institute of Electrical and Electronics Engineers Inc. Pag.169-172 ISBN:9781509030835; 9781509030835 | |
| 11th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2016 Smolenice Castle, svk 2016 | |
| DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Rubino, Alfredo | |
| Versione online | |
| Digital Object Identifier (DOI): 10.1109/ASDAM.2016.7805922 Codice identificativo ISI: WOS:000392530900042 Codice identificativo SCOPUS: 2-s2.0-85011044804 | |
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| 2016 | |
| Contributo in Atti di convegno | |
| Modelling the I-V-T characteristics of 4H-SiC DMOSFET in presence of SiO2/SiC interface traps and fixed oxide. In: ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems Institute of Electrical and Electronics Engineers Inc. Pag.199-202 ISBN:9781509030835; 9781509030835 | |
| 11th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2016 Smolenice Castle, svk 2016 | |
| Licciardo, GIAN DOMENICO; DI BENEDETTO, Luigi; Rubino, Alfredo | |
| Versione online | |
| Digital Object Identifier (DOI): 10.1109/ASDAM.2016.7805929 Codice identificativo ISI: WOS:000392530900049 Codice identificativo SCOPUS: 2-s2.0-85011101204 | |
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104779Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors
| 2016 | |
| Contributo in Atti di convegno | |
| Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors. In: Procedia Engineering Elsevier Ltd Vol.168, Pag.1003-1006 | |
| 30th Eurosensors Conference, Eurosensors 2016 hun 2016 | |
| Rao, S; Pangallo, G.; DI BENEDETTO, Luigi; Rubino, Alfredo; Licciardo, Gian Domenico; Corte, F. G. Della | |
| Versione online | |
| Digital Object Identifier (DOI): 10.1016/j.proeng.2016.11.326 Codice identificativo ISI: WOS:000391641300242 Codice identificativo SCOPUS: 2-s2.0-85009962029 | |
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| 2016 | |
| Contributo in Atti di convegno | |
| V2O5/4H-SiC Schottky diode as a high performance PTAT sensor. In: 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2016 Institute of Electrical and Electronics Engineers Inc. Pag.1-4 ISBN:9781509004935 | |
| 12th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2016 prt 2016 | |
| Pangallo, G.; Rao, S.; Della Corte, F. G.; DI BENEDETTO, Luigi; Rubino, Alfredo | |
| Digital Object Identifier (DOI): 10.1109/PRIME.2016.7519543 Codice identificativo ISI: WOS:000390689500095 Codice identificativo SCOPUS: 2-s2.0-84992061064 | |
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| 2016 | |
| Contributo in Atti di convegno | |
| Combination of light-induced effect and gate bias stress in organic phototransistors. In: AIP Conference Proceedings American Institute of Physics Inc. Vol.1736, Pag.020167-1-020167-4 ISBN:9780735413900 | |
| 8th International Conference on Times of Polymers and Composites: From Aerospace to Nanotechnology Ischia (NA), Italy 19-23 June 2016 | |
| Liguori, Rosalba; Sheets, W. C.; Bezzeccheri, Emanuele; Facchetti, A.; Rubino, Alfredo | |
| Versione online | |
| Digital Object Identifier (DOI): 10.1063/1.4949742 Codice identificativo ISI: WOS:000387931100167 Codice identificativo SCOPUS: 2-s2.0-84984578902 | |
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| 2016 | |
| Contributo in Atti di convegno | |
| Comparative modeling of vertical and planar organic phototransistors with 2D drift-diffusion simulations. In: AIP Conference Proceedings American Institute of Physics Inc. Vol.1736, Pag.020084-1-020084-4 ISBN:9780735413900 | |
| 8th International Conference on Times of Polymers and Composites: From Aerospace to Nanotechnology Ischia (NA), Italy 19-23 June 2016 | |
| Bezzeccheri, Emanuele; Colasanti, S.; Falco, Aniello; Liguori, Rosalba; Rubino, Alfredo; Lugli, Paolo | |
| Versione online | |
| Digital Object Identifier (DOI): 10.1063/1.4949659 Codice identificativo ISI: WOS:000387931100084 Codice identificativo SCOPUS: 2-s2.0-84984589149 | |
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| 2016 | |
| Contributo in Atti di convegno | |
| PC70BM n-type Thin Film Transistors: Influence of HMDS Deposition Temperature on the Devices Properties. In: Materials Today: Proceedings NANOTEXNOLOGY2015 (12th International Conference on Nanosciences & Nanotechnologies & 8th International Symposium on Flexible Organic Electronics ), Thessaloniki, Greece (NN15 & ISFOE15) Elsevier Ltd. Vol.3, Pag.720-726 | |
| NANOTEXNOLOGY2015 (12th International Conference on Nanosciences & Nanotechnologies & 8th International Symposium on Flexible Organic Electronics ), Thessaloniki, Greece 6-9 July | |
| Fiorillo, MARIA ROSA; Diletto, C.; Tassini, P.; Maglione, M. G.; Santoro, Elena; Villani, F.; Liguori, Rosalba; Maddalena, P.; Rubino, Alfredo; Minarini, C. | |
| Versione online | |
| Digital Object Identifier (DOI): 10.1016/j.matpr.2016.02.002 Codice identificativo ISI: WOS:000371026400002 Codice identificativo SCOPUS: 2-s2.0-84963654051 | |
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